Repository at Hanyang UniversityCOLLEGE OF ENGINEERING SCIENCES[E](공학대학)MATERIALS SCIENCE AND CHEMICAL ENGINEERING(재료화학공학과)Articles
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dc.contributor.author유봉영-
dc.date.accessioned2023-05-19T07:09:23Z-
dc.date.available2023-05-19T07:09:23Z-
dc.date.issued2012-05-
dc.identifier.citationCurrent Applied Physics, v. 12, NO. 3, Page. 784-788-
dc.identifier.issn1567-1739;1878-1675-
dc.identifier.urihttps://www.sciencedirect.com/science/article/pii/S1567173911005803?via%3Dihuben_US
dc.identifier.urihttps://repository.hanyang.ac.kr/handle/20.500.11754/180957-
dc.description.abstractMicrostructural and electrical properties of potentiostatically electrodeposited ZnO thin films from an aqueous bath were investigated after annealing at different temperatures in Ar and 5% H-2/Ar atmospheres. It is confirmed that the bandgap energy of ZnO thin films decreased with annealing from 3.42 to 3.27-3.29 eV by calculating the wavelength of the absorption region. The annealing at temperatures as low as 200 degrees C decreased the sheet resistance of ZnO thin films because of the extinction of Zn(OH)(2) in the atmosphere. In addition, the sheet resistance of ZnO thin films decreased by annealing in a 5% H-2 atmosphere, which caused an increase of carrier concentration by hydrogen reduction. (C) 2011 Elsevier B.V. All rights reserved.-
dc.description.sponsorshipThis research was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF)funded by the Ministry of Education, Science and Technology (R11- 2008-044-02003-0 and 2009-0076927), and the Pioneer Research Center Program through the National Research Foundation of Korea(2010-0002231).-
dc.languageen-
dc.publisherElsevier-
dc.subjectZnO thin films-
dc.subjectAnnealing process-
dc.subjectElectrochemical techniques-
dc.subjectElectrical properties-
dc.titleAnnealing effects on electrical and optical properties of ZnO thin films synthesized by the electrochemical method-
dc.typeArticle-
dc.relation.no3-
dc.relation.volume12-
dc.identifier.doi10.1016/j.cap.2011.11.007-
dc.relation.page784-788-
dc.relation.journalCurrent Applied Physics-
dc.contributor.googleauthorYoon, Sanghwa-
dc.contributor.googleauthorHuh, Ilgoo-
dc.contributor.googleauthorLim, Jae-Hong-
dc.contributor.googleauthorYoo, Bongyoung-
dc.sector.campusE-
dc.sector.daehak공학대학-
dc.sector.department재료화학공학과-
dc.identifier.pidbyyoo-
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