Repository at Hanyang UniversityCOLLEGE OF ENGINEERING SCIENCES[E](공학대학)ELECTRICAL ENGINEERING(전자공학부)Articles
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The Mobility Enhancement of Indium Gallium Zinc Oxide Transistors via Low-temperature Crystallization using a Tantalum Catalytic Layer (vol 7, 10885, 2017)
- Title
- The Mobility Enhancement of Indium Gallium Zinc Oxide Transistors via Low-temperature Crystallization using a Tantalum Catalytic Layer (vol 7, 10885, 2017)
- Author
- 오새룬터
- Issue Date
- 2018-05
- Publisher
- NATURE PUBLISHING GROUP
- Citation
- SCIENTIFIC REPORTS, v. 8, article no. 7883, Page. 1-1
- URI
- https://www.nature.com/articles/s41598-018-25896-6https://repository.hanyang.ac.kr/handle/20.500.11754/178764
- ISSN
- 2045-2322
- Appears in Collections:
- COLLEGE OF ENGINEERING SCIENCES[E](공학대학) > ELECTRICAL ENGINEERING(전자공학부) > Articles
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