Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 최창환 | - |
dc.date.accessioned | 2022-12-14T05:41:06Z | - |
dc.date.available | 2022-12-14T05:41:06Z | - |
dc.date.issued | 2022-01 | - |
dc.identifier.citation | Electronics (Switzerland), v. 11, NO. 1, article no. 53, Page. 1-12 | en_US |
dc.identifier.issn | 2079-9292;2079-9292 | en_US |
dc.identifier.uri | https://www.mdpi.com/2079-9292/11/1/53 | en_US |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/178307 | - |
dc.description.abstract | The memory characteristics of a flash memory device using c-axis aligned crystal indium gallium zinc oxide (CAAC-IGZO) thin film as a channel material were demonstrated. The CAAC-IGZO thin films can replace the current poly-silicon channel, which has reduced mobility because of grain-induced degradation. The CAAC-IGZO thin films were achieved using a tantalum catalyst layer with annealing. A thin film transistor (TFT) with SiO2/Si3N4/Al2O3 and CAAC-IGZO thin films, where Al2O3 was used for the tunneling layer, was evaluated for a flash memory application and compared with a device using an amorphous IGZO (a-IGZO) channel. A source and drain using indium-tin oxide and aluminum were also evaluated for TFT flash memory devices with crystallized and amorphous channel materials. Compared with the a-IGZO device, higher on-current (Ion), improved field effect carrier mobility (µFE), a lower body trap (Nss), a wider memory window (∆Vth), and better retention and endurance characteristics were attained using the CAAC-IGZO device. | en_US |
dc.description.sponsorship | This work supported by the Future Semiconductor Device Technology Development Program (10080689, 20003808, 20004399) funded by MOTIE (Ministry of Trade, Industry & Energy) and KSRC (Korea Semiconductor Research Consortium), This research was supported by the BK21 FOUR (Fostering Outstanding Universities for Research) project of the National Research Foundation of Korea Grant. | en_US |
dc.language | en | en_US |
dc.publisher | MDPI | en_US |
dc.source | 83353_최창환.pdf | - |
dc.subject | CAAC-IGZO | en_US |
dc.subject | High-k | en_US |
dc.subject | NAND flash | en_US |
dc.subject | Thin film transistor | en_US |
dc.title | Memory characteristics of thin film transistor with catalytic metal layer induced crystallized indium-gallium-zinc-oxide (IGZO) channel | en_US |
dc.type | Article | en_US |
dc.relation.no | 1 | - |
dc.relation.volume | 11 | - |
dc.identifier.doi | 10.3390/electronics11010053 | en_US |
dc.relation.page | 1-12 | - |
dc.relation.journal | Electronics (Switzerland) | - |
dc.contributor.googleauthor | Han, Hoonhee | - |
dc.contributor.googleauthor | Jang, Seokmin | - |
dc.contributor.googleauthor | Kim, Duho | - |
dc.contributor.googleauthor | Kim, Taeheun | - |
dc.contributor.googleauthor | Cho, Hyeoncheol | - |
dc.contributor.googleauthor | Shin, Heedam | - |
dc.contributor.googleauthor | Choi, Changhwan | - |
dc.sector.campus | S | - |
dc.sector.daehak | 공과대학 | - |
dc.sector.department | 신소재공학부 | - |
dc.identifier.pid | cchoi | - |
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