Interfacial Engineering at Quantum Dot-Sensitized TiO2 Photoelectrodes for Ultrahigh Photocurrent Generation
- Title
- Interfacial Engineering at Quantum Dot-Sensitized TiO2 Photoelectrodes for Ultrahigh Photocurrent Generation
- Author
- 장재영
- Keywords
- TiO2/QD; photoanode; photoelectrochemical cells; surface passivation layer; surface state; charge collection; photocurrent density
- Issue Date
- 2021-02
- Publisher
- AMER CHEMICAL SOC
- Citation
- ACS APPLIED MATERIALS & INTERFACES, v. 13, no. 5, page. 6208-6218
- Abstract
- Metal oxide semiconductor/chalcogenide quantum dot (QD) heterostructured photoanodes show photocurrent densities ˃30 mA/cm(2) with ZnO, approaching the theoretical limits in photovoltaic (PV) cells. However, comparative performance has not been achieved with TiO2. Here, we applied a TiO2(B) surface passivation layer (SPL) on TiO2/QD (PbS and CdS) and achieved a photocurrent density of 34.59 mA/cm(2) under AM 1.5G illumination for PV cells, the highest recorded to date. The SPL improves electron conductivity by increasing the density of surface states, facilitating multiple trapping/detrapping transport, and increasing the coordination number of TiO2 nanoparticles. This, along with impeded electron recombination, led to enhanced collection efficiency, which is a major factor for performance. Furthermore, SPL-treated TiO2/QD photoanodes were successfully exploited in photo-electrochemical water splitting cells, showing an excellent photocurrent density of 14.43 mA/cm(2) at 0.82 V versus the Reversible Hydrogen Electrode (RHE). These results suggest a new promising strategy for the development of high-performance photoelectrochemical devices.
- URI
- https://pubs.acs.org/doi/10.1021/acsami.0c19352https://repository.hanyang.ac.kr/handle/20.500.11754/175868
- ISSN
- 1944-8244; 1944-8252
- DOI
- 10.1021/acsami.0c19352
- Appears in Collections:
- COLLEGE OF ENGINEERING[S](공과대학) > ENERGY ENGINEERING(에너지공학과) > Articles
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