Interfacial Engineering at Quantum Dot-Sensitized TiO2 Photoelectrodes for Ultrahigh Photocurrent Generation

Abstract

Metal oxide semiconductor/chalcogenide quantum dot (QD) heterostructured photoanodes show photocurrent densities ˃30 mA/cm(2) with ZnO, approaching the theoretical limits in photovoltaic (PV) cells. However, comparative performance has not been achieved with TiO2. Here, we applied a TiO2(B) surface passivation layer (SPL) on TiO2/QD (PbS and CdS) and achieved a photocurrent density of 34.59 mA/cm(2) under AM 1.5G illumination for PV cells, the highest recorded to date. The SPL improves electron conductivity by increasing the density of surface states, facilitating multiple trapping/detrapping transport, and increasing the coordination number of TiO2 nanoparticles. This, along with impeded electron recombination, led to enhanced collection efficiency, which is a major factor for performance. Furthermore, SPL-treated TiO2/QD photoanodes were successfully exploited in photo-electrochemical water splitting cells, showing an excellent photocurrent density of 14.43 mA/cm(2) at 0.82 V versus the Reversible Hydrogen Electrode (RHE). These results suggest a new promising strategy for the development of high-performance photoelectrochemical devices.