Storage Mechanisms of Polyimide-Molybdenum Disulfide Quantum Dot Based, Highly Stable, Write-Once-Read-Many-Times Memristive Devices
- Title
- Storage Mechanisms of Polyimide-Molybdenum Disulfide Quantum Dot Based, Highly Stable, Write-Once-Read-Many-Times Memristive Devices
- Author
- 김태환
- Keywords
- electrical characteristics; high thermal stability; memristive devices; MoS2 quantum dots; quantum confinement effect
- Issue Date
- 2021-01
- Publisher
- WILEY
- Citation
- ADVANCED ELECTRONIC MATERIALS, v. 7, no. 1, article no. 2000593
- Abstract
- In this paper two-terminal memristive devices are presented with a structure of aluminum/polyimide-molybdenumdisulfide quantum dot (QD) nanocomposite/poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate)/indium tin oxide that exhibits the characteristics of write-once-read-many times in the range of applied voltages from -6 to 3 V. The operating voltage of the device is as low as 1.4 V, and the ON/OFF ratio of 3 x 10(3) can be maintained for retention times larger than 3 x 10(4) s. No significant variation in the current-voltage (I-V) curves of the devices is observed under high annealing temperatures of 50, 100, and 200 degrees C, which is indicative of their excellent thermal stability. The conduction mechanisms of the devices in their high and low resistance states are described by fitting the I-V curves of the devices.
- URI
- https://onlinelibrary.wiley.com/doi/10.1002/aelm.202000593https://repository.hanyang.ac.kr/handle/20.500.11754/175555
- ISSN
- 2199-160X
- DOI
- 10.1002/aelm.202000593
- Appears in Collections:
- COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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