A Novel Structure and Operation Scheme of Vertical Channel NAND Flash with Ferroelectric Memory for Multi String Operations
- Title
- A Novel Structure and Operation Scheme of Vertical Channel NAND Flash with Ferroelectric Memory for Multi String Operations
- Author
- 송윤흡
- Keywords
- ferroelectric memory; vertical channel NAND flash; polysilicon; GIDL
- Issue Date
- 2020-12
- Publisher
- MDPI
- Citation
- ELECTRONICS, v.10, no. 1, article no. 32, Page. 1-12
- Abstract
- In this study, the operation method of the proposed ferroelectric memory structure as a
method to overcome the limitations of the existing Charge Trap Flash (CTF) memory Vertical NAND
(V-NAND) structure was presented and verified through device simulation. The proposed structure
and operation method applied the BiCS (Bit Cost Scalable) structure GIDL (Gate Induce Drain
Leakage) deletion method to confirm that selective program operation is possible in the ferroelectric
memory V-NAND (Vertical Channel NAND) structure. In particular, we confirmed that the proposed
method can easily suppress the program operation by adjusting the hole density of the channel
even in the “Y-mode” operation. The channel hole density adjustment that makes this possible
can be easily controlled by the voltage difference between the bit line (BL) and drain select line
(DSL) contacts. The proposed structure was verified through a device simulation, and as a result of
the verification, it was confirmed that the channel hole can be selectively charged in the program
operation. Through this, when the cell to be programmed shows the program operation of 2.3 V, the
other cells do not. It was confirmed that it could be suppressed to 0.4 V.
- URI
- https://www.mdpi.com/2079-9292/10/1/32https://repository.hanyang.ac.kr/handle/20.500.11754/173869
- ISSN
- 2079-9292
- DOI
- 10.3390/electronics10010032
- Appears in Collections:
- COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
- Files in This Item:
- A Novel Structure and Operation Scheme of Vertical Channel NAND Flash with Ferroelectric Memory for Multi String Operations.pdfDownload
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