Hot Carrier Effect in Self-Aligned In-Ga-Zn-O Thin-Film Transistors with Short Channel Length
- Title
- Hot Carrier Effect in Self-Aligned In-Ga-Zn-O Thin-Film Transistors with Short Channel Length
- Author
- 정재경
- Keywords
- Amorphous In–Ga–Zn–O (a-IGZO); hot carrier effect (HCE); instability; oxygen-related defect; thin-film transistor (TFT)
- Issue Date
- 2020-11
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Citation
- IEEE TRANSACTIONS ON ELECTRON DEVICES, v. 67, no. 12, page. 5544-5551
- Abstract
- This study examines the impact of channel length (L) on the performance of amorphous In-Ga-Zn-O (a-IGZO) thin-film transistors with self-aligned structures. The negative threshold voltage (V-TH) displacement for IGZO transistors with increasing drain voltage (V-DS) becomes severe with decreasing L from 10 to 2 mu m. The V-DS-dependent negative V-TH shift can be mitigated by increasing the oxygen flow rate (OFR) ratio during a-IGZO preparation from 40% to 80%, which suppresses the number of oxygen vacancy defects near the n+ drain of the a-IGZO region. In contrast, the hot carrier stress (HCS)-induced degradation in terms of the threshold voltage was accelerated for devices with increasing OFR ratio, presumably due to the creation of excessive oxygen-originated defects. The rationale for these observations is discussed with regard to the increasing local electric field near the drain junction, which was calculated by technology computer-aided design (TCAD) simulation. We concluded that an acceptable compromise between short channel effect and HCS-induced degradations can be achieved by choosing an intermediate OFR ratio of 64%.
- URI
- https://ieeexplore.ieee.org/document/9248003/https://repository.hanyang.ac.kr/handle/20.500.11754/172205
- ISSN
- 0018-9383; 1557-9646
- DOI
- 10.1109/TED.2020.3032383
- Appears in Collections:
- COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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