Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 정재경 | - |
dc.date.accessioned | 2022-08-08T01:56:28Z | - |
dc.date.available | 2022-08-08T01:56:28Z | - |
dc.date.issued | 2020-11 | - |
dc.identifier.citation | IEEE TRANSACTIONS ON ELECTRON DEVICES, v. 67, no. 12, page. 5544-5551 | en_US |
dc.identifier.issn | 0018-9383 | - |
dc.identifier.issn | 1557-9646 | - |
dc.identifier.uri | https://ieeexplore.ieee.org/document/9248003/ | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/172205 | - |
dc.description.abstract | This study examines the impact of channel length (L) on the performance of amorphous In-Ga-Zn-O (a-IGZO) thin-film transistors with self-aligned structures. The negative threshold voltage (V-TH) displacement for IGZO transistors with increasing drain voltage (V-DS) becomes severe with decreasing L from 10 to 2 mu m. The V-DS-dependent negative V-TH shift can be mitigated by increasing the oxygen flow rate (OFR) ratio during a-IGZO preparation from 40% to 80%, which suppresses the number of oxygen vacancy defects near the n+ drain of the a-IGZO region. In contrast, the hot carrier stress (HCS)-induced degradation in terms of the threshold voltage was accelerated for devices with increasing OFR ratio, presumably due to the creation of excessive oxygen-originated defects. The rationale for these observations is discussed with regard to the increasing local electric field near the drain junction, which was calculated by technology computer-aided design (TCAD) simulation. We concluded that an acceptable compromise between short channel effect and HCS-induced degradations can be achieved by choosing an intermediate OFR ratio of 64%. | en_US |
dc.description.sponsorship | This work was supported by Samsung Display. | en_US |
dc.language.iso | en | en_US |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | en_US |
dc.subject | Amorphous In–Ga–Zn–O (a-IGZO) | en_US |
dc.subject | hot carrier effect (HCE) | en_US |
dc.subject | instability | en_US |
dc.subject | oxygen-related defect | en_US |
dc.subject | thin-film transistor (TFT) | en_US |
dc.title | Hot Carrier Effect in Self-Aligned In-Ga-Zn-O Thin-Film Transistors with Short Channel Length | en_US |
dc.type | Article | en_US |
dc.relation.no | 12 | - |
dc.relation.volume | 67 | - |
dc.identifier.doi | 10.1109/TED.2020.3032383 | - |
dc.relation.page | 5544-5551 | - |
dc.relation.journal | IEEE TRANSACTIONS ON ELECTRON DEVICES | - |
dc.contributor.googleauthor | On, Nuri | - |
dc.contributor.googleauthor | Kim, Bo Kyoung | - |
dc.contributor.googleauthor | Lee, Sueon | - |
dc.contributor.googleauthor | Kim, Eun Hyun | - |
dc.contributor.googleauthor | Lim, Jun Hyung | - |
dc.contributor.googleauthor | Jeong, Jae Kyeong | - |
dc.relation.code | 2020053787 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | SCHOOL OF ELECTRONIC ENGINEERING | - |
dc.identifier.pid | jkjeong1 | - |
dc.identifier.orcid | https://orcid.org/0000-0003-3857-1039 | - |
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