Effect of H2S pre-annealing treatment on interfacial and electrical properties of HfO2/Si1-xGex (x=0-0.3)
- Title
- Effect of H2S pre-annealing treatment on interfacial and electrical properties of HfO2/Si1-xGex (x=0-0.3)
- Author
- 박태주
- Issue Date
- 2021-02
- Publisher
- ROYAL SOC CHEMISTRY
- Citation
- JOURNAL OF MATERIALS CHEMISTRY C, v. 9, NO 5, Page. 1829-1835
- Abstract
- To understand the effect of H2S pre-annealing treatment on a Si1xGex alloy film, the interfacial and
electrical characteristics of atomic-layer-deposited HfO2/Si1xGex were studied while varying the Ge
concentration (x value) from 0 to 0.3. H2S pre-annealing was performed on the Si1xGex substrates at
400 1C for 30 s using a rapid thermal annealing system prior to the HfO2 deposition. As the Ge
concentration in Si1xGex increased, the H2S pretreatment caused a greater increase in the capacitanceequivalent oxide thickness because of accelerated interfacial oxidation by a thermal annealing side
effect. However, it was advantageous in reducing the interface state density on a Ge-rich surface, which
suggested effective sulfur passivation on the Ge dangling bonds at the HfO2/Si1xGex interface.
Furthermore, the H2S pretreatment was effective in suppressing the out-diffusion of Ge towards the
HfO2 film, which was beneficial in improving the near-interface charge trapping characteristics.
- URI
- https://pubs.rsc.org/en/content/articlelanding/2021/TC/D0TC04760Khttps://repository.hanyang.ac.kr/handle/20.500.11754/171892
- ISSN
- 20507526; 20507534
- DOI
- 10.1039/d0tc04760k
- Appears in Collections:
- COLLEGE OF ENGINEERING SCIENCES[E](공학대학) > MATERIALS SCIENCE AND CHEMICAL ENGINEERING(재료화학공학과) > Articles
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