Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 박태주 | - |
dc.date.accessioned | 2022-07-29T00:47:05Z | - |
dc.date.available | 2022-07-29T00:47:05Z | - |
dc.date.issued | 2021-02 | - |
dc.identifier.citation | JOURNAL OF MATERIALS CHEMISTRY C, v. 9, NO 5, Page. 1829-1835 | en_US |
dc.identifier.issn | 20507526 | - |
dc.identifier.issn | 20507534 | - |
dc.identifier.uri | https://pubs.rsc.org/en/content/articlelanding/2021/TC/D0TC04760K | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/171892 | - |
dc.description.abstract | To understand the effect of H2S pre-annealing treatment on a Si1xGex alloy film, the interfacial and electrical characteristics of atomic-layer-deposited HfO2/Si1xGex were studied while varying the Ge concentration (x value) from 0 to 0.3. H2S pre-annealing was performed on the Si1xGex substrates at 400 1C for 30 s using a rapid thermal annealing system prior to the HfO2 deposition. As the Ge concentration in Si1xGex increased, the H2S pretreatment caused a greater increase in the capacitanceequivalent oxide thickness because of accelerated interfacial oxidation by a thermal annealing side effect. However, it was advantageous in reducing the interface state density on a Ge-rich surface, which suggested effective sulfur passivation on the Ge dangling bonds at the HfO2/Si1xGex interface. Furthermore, the H2S pretreatment was effective in suppressing the out-diffusion of Ge towards the HfO2 film, which was beneficial in improving the near-interface charge trapping characteristics. | en_US |
dc.description.sponsorship | This study was supported by a strategic research program funded by Samsung Electronics. It was also partially supported by a future semiconductor device technology development program (10067739) funded by Ministry of Trade, Industry & Energy (MOTIE) and Korea Semiconductor Research Consortium (KSRC), and by a nano-material technology development program (2015M3A7B7045490) through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT & Future Planning. | en_US |
dc.language.iso | en | en_US |
dc.publisher | ROYAL SOC CHEMISTRY | en_US |
dc.title | Effect of H2S pre-annealing treatment on interfacial and electrical properties of HfO2/Si1-xGex (x=0-0.3) | en_US |
dc.type | Article | en_US |
dc.relation.no | 5 | - |
dc.relation.volume | 9 | - |
dc.identifier.doi | 10.1039/d0tc04760k | - |
dc.relation.page | 1829-1835 | - |
dc.relation.journal | JOURNAL OF MATERIALS CHEMISTRY C | - |
dc.contributor.googleauthor | Lee, Woohui | - |
dc.contributor.googleauthor | Lee, Changmin | - |
dc.contributor.googleauthor | Kim, Jinyong | - |
dc.contributor.googleauthor | Lee, Jehoon | - |
dc.contributor.googleauthor | Eom, Deokjoon | - |
dc.contributor.googleauthor | Park, Jae Chan | - |
dc.contributor.googleauthor | Park, Tae Joo | - |
dc.contributor.googleauthor | Kim, Hyoungsub | - |
dc.relation.code | 2021001864 | - |
dc.sector.campus | E | - |
dc.sector.daehak | COLLEGE OF ENGINEERING SCIENCES[E] | - |
dc.sector.department | DEPARTMENT OF MATERIALS SCIENCE AND CHEMICAL ENGINEERING | - |
dc.identifier.pid | tjp | - |
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