Highly Selective Polishing Rate Between a Tungsten Film and a Silicon-Dioxide Film by Using a Malic-Acid Selectivity Agent in Tungsten-Film Chemical-Mechanical Planarization
- Title
- Highly Selective Polishing Rate Between a Tungsten Film and a Silicon-Dioxide Film by Using a Malic-Acid Selectivity Agent in Tungsten-Film Chemical-Mechanical Planarization
- Author
- 박재근
- Keywords
- Chemical-mechanical planarization; Tungsten; Selectivity; Malic acid
- Issue Date
- 2020-06
- Publisher
- KOREAN PHYSICAL SOC
- Citation
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v. 76, no. 12, page. 1127-1132
- Abstract
- For achieving a highly selective polishing rate between a tungsten (W) film and a silicon-dioxide (SiO2) film in W chemical-mechanical planarization (CMP), we designed W-film CMP slurry by mixing a small-molecule having two carboxylic functional groups (i.e., malic acid) as a selectivity agent. The selectivity was principally controlled by the malic acid concentration: it rapidly increased with increasing malic acid concentration in the W-film CMP slurry, and a W-film polishing rate:SiO2-film polishing rate of ˃100:1 was achieved. We found that the selectivity was mainly determined by the chemical properties, such as the corrosion and the chemical reaction between the films and malic acid rather than by the mechanical property,i.e., the electrostatic force between the ZrO(2)abrasive and the films.
- URI
- https://link.springer.com/article/10.3938/jkps.76.1127https://repository.hanyang.ac.kr/handle/20.500.11754/168873
- ISSN
- 0374-4884; 1976-8524
- DOI
- 10.3938/jkps.76.1127
- Appears in Collections:
- COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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