Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 오혜근 | - |
dc.date.accessioned | 2021-11-30T02:04:00Z | - |
dc.date.available | 2021-11-30T02:04:00Z | - |
dc.date.issued | 2021-06 | - |
dc.identifier.citation | JAPANESE JOURNAL OF APPLIED PHYSICS, v. 60, Article no. SCC04, page. 8pp | en_US |
dc.identifier.issn | 0021-4922 | - |
dc.identifier.issn | 1347-4065 | - |
dc.identifier.uri | https://iopscience.iop.org/article/10.35848/1347-4065/abf2d1 | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/166526 | - |
dc.description.abstract | In high numerical aperture (NA) extreme ultraviolet lithography, which is used to implement a finer linewidth of 10 nm or lower, serious problems arise in patterning as the NA increases. To alleviate such problems, a thin absorber and a multilayer with good reflective efficiency and improved pattern quality are required. To develop an effective EUV photomask for the commercialization of high-NA systems, we determined the optimal ruthenium (Ru)/silicon (Si) multilayer structure using a phase-shift mask (PSM) absorber. A Ru/Si multilayer (d(Ru) = 2.2 nm, d(Si) = 4.7 nm) using PSM as an absorber has a smaller best-focus range and placement error compared to the molybdenum (Mo)/silicon (Si) multilayer. At the same time, it provides improved image contrast, enabling more stable patterning. Even when the number of layers of the Ru/Si multilayer was reduced, it was confirmed that the reflectance efficiency and image quality were maintained. (c) 2021 The Japan Society of Applied Physics | en_US |
dc.description.sponsorship | This research was supported by National R&D Program through the National Research Foundation of Korea (NRF) funded by Ministry of Science and ICT (NRF2020M3H4A3081881). | en_US |
dc.language.iso | en_US | en_US |
dc.publisher | IOP PUBLISHING LTD | en_US |
dc.title | Optimal phase shift mask and multilayer stack with the evaluation of imaging performance and process latitude in extreme ultraviolet high numerical aperture | en_US |
dc.type | Article | en_US |
dc.relation.no | SC | - |
dc.relation.volume | 60 | - |
dc.identifier.doi | 10.35848/1347-4065/abf2d1 | - |
dc.relation.page | 1-9 | - |
dc.relation.journal | JAPANESE JOURNAL OF APPLIED PHYSICS | - |
dc.contributor.googleauthor | Kang, In-Hwa | - |
dc.contributor.googleauthor | Park, Jang-Gun | - |
dc.contributor.googleauthor | Ban, Chung-Hyun | - |
dc.contributor.googleauthor | Oh, Hye-Keun | - |
dc.relation.code | 2021005616 | - |
dc.sector.campus | E | - |
dc.sector.daehak | COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E] | - |
dc.sector.department | DEPARTMENT OF APPLIED PHYSICS | - |
dc.identifier.pid | hyekeun | - |
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