Achieving High Mobility and Excellent Stability in Amorphous In-Ga-Zn-Sn-O Thin-Film Transistors
- Title
- Achieving High Mobility and Excellent Stability in Amorphous In-Ga-Zn-Sn-O Thin-Film Transistors
- Author
- 정재경
- Keywords
- Amorphous indium gallium zinc oxide (a-IGZO); amorphous indium gallium zinc tin oxide (a-IGZTO); high performance; mass density; thin-film transistors (TFTs)
- Issue Date
- 2020-03
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Citation
- IEEE TRANSACTIONS ON ELECTRON DEVICES, v. 67, no. 3, page. 1014-1020
- Abstract
- This article reports the fabrication of highperformance amorphous indium gallium zinc tin oxide (a-IGZTO) thin-film transistors (TFTs) with superior bias stability. For comparison, amorphous indium gallium zinc oxide (a-IGZO) TFTswere also investigated to clarify the origin of the superior performance of IGZTO TFTs. It was found that the simultaneous heavy loading of In and Sn into the IGZTO system facilitated an effective mass densification, leading to a reduction in tail states and deep states. The fabricated a-IGZTO TFTs exhibited a high electron mobility (mu FE) of 46.7 cm(2)/Vs, a subthreshold swing (SS) gate of 0.15 V/decade, and an ION/ OFF ratio >1 x 10(8). Furthermore, greater gate-bias stress stabilitywas observed for the IGZTO TFTs compared with the IGZO TFTs.
- URI
- https://ieeexplore.ieee.org/document/8985304https://repository.hanyang.ac.kr/handle/20.500.11754/165144
- ISSN
- 0018-9383; 1557-9646
- DOI
- 10.1109/TED.2020.2968592
- Appears in Collections:
- COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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