Improved CdS quantum dot distribution on a TiO2 photoanode by an atomic-layer-deposited ZnS passivation layer for quantum dot-sensitized solar cells
- Title
- Improved CdS quantum dot distribution on a TiO2 photoanode by an atomic-layer-deposited ZnS passivation layer for quantum dot-sensitized solar cells
- Author
- 방진호
- Keywords
- QDSSCs; Atomic layer deposition; ZnS passivation Layer; QDs distribution; CdS
- Issue Date
- 2020-12
- Publisher
- Elsevier B.V.
- Citation
- SOLAR ENERGY MATERIALS AND SOLAR CELLS, v. 218, Article no. 110753, 6pp
- Abstract
- An ultrathin (˂ similar to 0.5 nm) ZnS interfacial passivation layer (IPL) was produced by atomic layer deposition in order to improve the performance of CdS quantum-dot (QD) sensitized solar cells. The mutable role of the top ZnS IPL, deposited after QD sensitization, enhanced light absorbance by acting as an anti-reflective coating resulting in increased photocurrent. The bottom ZnS IPL deposited on the TiO2 photoanode before QD sensitization led to a uniform distribution of smaller-sized QD microaggregates by modification of the surface energy of TiO2, which improved the photo-generated charge carrier injection from QD to TiO2. Furthermore, both ZnS IPLs have roles as the recombination barrier layer. Consequently, the photoconversion efficiency was enhanced by approximately 15% and 30% in cells with top and bottom ZnS IPLs, respectively.
- URI
- https://www.sciencedirect.com/science/article/pii/S0927024820303524https://repository.hanyang.ac.kr/handle/20.500.11754/165062
- ISSN
- 0927-0248
- DOI
- 10.1016/j.solmat.2020.110753
- Appears in Collections:
- COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E](과학기술융합대학) > CHEMICAL AND MOLECULAR ENGINEERING(화학분자공학과) > Articles
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