Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 방진호 | - |
dc.date.accessioned | 2021-09-09T05:12:45Z | - |
dc.date.available | 2021-09-09T05:12:45Z | - |
dc.date.issued | 2020-12 | - |
dc.identifier.citation | SOLAR ENERGY MATERIALS AND SOLAR CELLS, v. 218, Article no. 110753, 6pp | en_US |
dc.identifier.issn | 0927-0248 | - |
dc.identifier.uri | https://www.sciencedirect.com/science/article/pii/S0927024820303524 | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/165062 | - |
dc.description.abstract | An ultrathin (˂ similar to 0.5 nm) ZnS interfacial passivation layer (IPL) was produced by atomic layer deposition in order to improve the performance of CdS quantum-dot (QD) sensitized solar cells. The mutable role of the top ZnS IPL, deposited after QD sensitization, enhanced light absorbance by acting as an anti-reflective coating resulting in increased photocurrent. The bottom ZnS IPL deposited on the TiO2 photoanode before QD sensitization led to a uniform distribution of smaller-sized QD microaggregates by modification of the surface energy of TiO2, which improved the photo-generated charge carrier injection from QD to TiO2. Furthermore, both ZnS IPLs have roles as the recombination barrier layer. Consequently, the photoconversion efficiency was enhanced by approximately 15% and 30% in cells with top and bottom ZnS IPLs, respectively. | en_US |
dc.description.sponsorship | This work was supported by the Future Semiconductor Device Technology Development Program (10067739) funded by Ministry of Trade, Industry & Energy (MOTIE) and Korea Semiconductor Research Consortium (KSRC). This work was also supported by a grant from the Basic Science Research Program through the National Research Foun-dation (NRF) of Korea funded by the Ministry of Science and ICT (NRF- 2019R1A2C1003429). | en_US |
dc.language.iso | en_US | en_US |
dc.publisher | Elsevier B.V. | en_US |
dc.subject | QDSSCs | en_US |
dc.subject | Atomic layer deposition | en_US |
dc.subject | ZnS passivation Layer | en_US |
dc.subject | QDs distribution | en_US |
dc.subject | CdS | en_US |
dc.title | Improved CdS quantum dot distribution on a TiO2 photoanode by an atomic-layer-deposited ZnS passivation layer for quantum dot-sensitized solar cells | en_US |
dc.type | Article | en_US |
dc.relation.volume | 218 | - |
dc.identifier.doi | 10.1016/j.solmat.2020.110753 | - |
dc.relation.page | 110753-110758 | - |
dc.relation.journal | SOLAR ENERGY MATERIALS AND SOLAR CELLS | - |
dc.contributor.googleauthor | Jung, Eun Sun | - |
dc.contributor.googleauthor | Basit, Muhammad Abdul | - |
dc.contributor.googleauthor | Abbas, Muhammad Awais | - |
dc.contributor.googleauthor | Ali, Ijaz | - |
dc.contributor.googleauthor | Kim, Dae Woong | - |
dc.contributor.googleauthor | Park, Young Min | - |
dc.contributor.googleauthor | Bang, Jin Ho | - |
dc.contributor.googleauthor | Park, Tae Joo | - |
dc.relation.code | 2020048802 | - |
dc.sector.campus | E | - |
dc.sector.daehak | COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E] | - |
dc.sector.department | DEPARTMENT OF CHEMICAL AND MOLECULAR ENGINEERING | - |
dc.identifier.pid | jbang | - |
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