Simulation study of a monolithic III-V/Si V-groove carrier depletion optical phase shifter
- Title
- Simulation study of a monolithic III-V/Si V-groove carrier depletion optical phase shifter
- Author
- 김영현
- Keywords
- Optical phase shifter; optical modulation; heterogeneous integration; III-V on Si; hybrid integration
- Issue Date
- 2020-02
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Citation
- IEEE JOURNAL OF QUANTUM ELECTRONICS, v. 56, no. 1, Article no. 6300208, 8pp
- Abstract
- In this paper, we propose a new carrier depletiontype hybrid III-V/Si optical phase shifter using a n-III-V/p-Si hetero-junction, which can be fabricated with direct epitaxial growth of III-V semiconductors on Si. We numerically analyzed the performance of the III-V/Si hybrid optical phase shifter by comparing the performance in reverse bias operation with that of pure Si or III-V p-n optical phase shifters. The hybrid III-V/Si optical phase shifter showed improved modulation efficiency and lower optical loss compared to pure Si and III-V p-n optical phase shifters, owing to the large electron-induced refractive index change of III-V compound semiconductors, while avoiding the large hole-induced optical loss of III-V compound semiconductor. The simulation study suggests the feasibility of a very low voltage-length product (V π L) of 0.07 V · cm, a low insertion loss (α) of 16 dB/cm, and a very low α V π L product close to 1 V · dB at 1.31 μ m, which is 10x lower than for Si p-n optical phase shifters.
- URI
- https://ieeexplore.ieee.org/document/8984307?arnumber=8984307&SID=EBSCO:edseeehttps://repository.hanyang.ac.kr/handle/20.500.11754/163196
- ISSN
- 0018-9197; 1558-1713
- DOI
- 10.1109/JQE.2020.2971764
- Appears in Collections:
- COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E](과학기술융합대학) > PHOTONICS AND NANOELECTRONICS(나노광전자학과) > Articles
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