Effect of Interface State Density of the AlGaN Electron Blocking Layer/GaN Barrier Layer in InGaN Blue Light-Emitting Diodes
- Title
- Effect of Interface State Density of the AlGaN Electron Blocking Layer/GaN Barrier Layer in InGaN Blue Light-Emitting Diodes
- Author
- 심종인
- Keywords
- InGaN quantum wells; Patterned sapphire substrate; Strain
- Issue Date
- 2020-03
- Publisher
- KOREAN PHYSICAL SOC
- Citation
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v. 76, no. 6, page. 522-526
- Abstract
- Herein, two kinds of blue InGaN light-emitting diodes (LEDs) were compared in order to understand the effect of the strain originating from two different sapphire substrates. One of the LED types was grown on a patterned sapphire substrate (PSS), and the other was grown on a conventional sapphire substrate (CSS). The internal strains biased on InGaN quantum wells were compared by studying the time-resolved photoluminescence and the electroreflectance. Through analysis of the dynamic capacitance dispersion measurements, the relation between the trap states and trap density of the AlGaN electron blocking layer/GaN barrier interface above the InGaN quantum wells can be understood in great detail. The trapped charges of the CSSs have faster response times than those of the PSSs; this is attributed to the stronger piezo-field, which induces the AlGaN EBL/GaN barrier interface trap states to be effectively located at shallower levels from the conduction band.
- URI
- https://www.dbpia.co.kr/Journal/articleDetail?nodeId=NODE09389879https://repository.hanyang.ac.kr/handle/20.500.11754/163092
- ISSN
- 0374-4884
- DOI
- 10.3938/jkps.76.522
- Appears in Collections:
- COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E](과학기술융합대학) > PHOTONICS AND NANOELECTRONICS(나노광전자학과) > Articles
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