Parameter extraction for 193 nm chemically amplified resist from refractive index change
- Title
- Parameter extraction for 193 nm chemically amplified resist from refractive index change
- Author
- 안일신
- Keywords
- Computer simulation; Extraction; Lithography; Probes; Refractive index; Thickness measurement; Photoresists; Amplified deprotection reaction; Chemically amplified resists; Postexposure bake; Transmittance
- Issue Date
- 2001-09
- Publisher
- 미국진공학회
- Citation
- Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, v. 19, no. 6, page. 2077-2081
- Abstract
- Some of the important areas to be improved for lithography simulation are: obtaining correct
exposure parameters and determining the change of refractive index. It is known that the real and imaginary refractive indices are changed during exposure. We obtained these refractive index changes during exposure for 193 nm chemically amplified resists. The variations of the transmittance as well as the resist thickness were measured during ArF excimer laser exposure. We found that the refractive index change is directly related to the concentration of the photo acid generator and deprotected resin. It is important to know the exact values of acid concentration from the exposure parameters since a small difference in acid concentration magnifies the variation in the amplified deprotection during postexposure bake. We developed and used a method to extract Dill ABC exposure parameters for 193 nm chemically amplified resist from the refractive index change
upon exposure.
- URI
- https://avs.scitation.org/doi/abs/10.1116/1.1414016https://repository.hanyang.ac.kr/handle/20.500.11754/161591
- ISSN
- 1071-1023
- DOI
- 10.1116/1.1414016
- Appears in Collections:
- COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E](과학기술융합대학) > PHOTONICS AND NANOELECTRONICS(나노광전자학과) > Articles
- Files in This Item:
There are no files associated with this item.
- Export
- RIS (EndNote)
- XLS (Excel)
- XML