Plasma Source Ion Implantation for Ultrashallow Junctions: Low Energy and High Dose Rate

Abstract

Ultrashallow p+/n junctions fabricated by plasma source ion implantation (PSII) were studied. After as-implanted samples were spike-annealed at 1000°C and annealed for 5 s at 1000°C, for samples with a background doping concentration of 6×1017 #/cm3, ultrashallow junction depths of 548 Å and 745 Å, respectively, could be obtained with an implant energy of 0.5 keV. Also, sheet resistances of 330 Ω/\Box and 228 Ω/\Box were acquired, respectively. These junction depths and sheet resistances obtained by the PSII process were found to satisfy 0.15 µm metal oxide semiconductor field effect transistor (MOSFET) applications.