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Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 김곤호 | - |
| dc.date.accessioned | 2021-02-17T02:43:03Z | - |
| dc.date.available | 2021-02-17T02:43:03Z | - |
| dc.date.issued | 2001-04 | - |
| dc.identifier.citation | Japanese Journal of Applied Physics, v. 40, no. 4R, page. 2506-2507 | en_US |
| dc.identifier.issn | 0021-4922 | - |
| dc.identifier.issn | 1347-4065 | - |
| dc.identifier.uri | https://iopscience.iop.org/article/10.1143/JJAP.40.2506/meta | - |
| dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/158548 | - |
| dc.description.abstract | Ultrashallow p+/n junctions fabricated by plasma source ion implantation (PSII) were studied. After as-implanted samples were spike-annealed at 1000°C and annealed for 5 s at 1000°C, for samples with a background doping concentration of 6×1017 #/cm3, ultrashallow junction depths of 548 Å and 745 Å, respectively, could be obtained with an implant energy of 0.5 keV. Also, sheet resistances of 330 Ω/\Box and 228 Ω/\Box were acquired, respectively. These junction depths and sheet resistances obtained by the PSII process were found to satisfy 0.15 µm metal oxide semiconductor field effect transistor (MOSFET) applications. | en_US |
| dc.language.iso | en_US | en_US |
| dc.publisher | The Japan society of Applied Physics | en_US |
| dc.subject | plasma source ion implantation | en_US |
| dc.subject | ultrashallow junction | en_US |
| dc.subject | junction depth | en_US |
| dc.subject | 0.15µm MOSFET | en_US |
| dc.subject | background doping concentration | en_US |
| dc.title | Plasma Source Ion Implantation for Ultrashallow Junctions: Low Energy and High Dose Rate | en_US |
| dc.type | Article | en_US |
| dc.identifier.doi | 10.1143/JJAP.40.2506 | - |
| dc.relation.journal | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & | - |
| dc.contributor.googleauthor | Cho, Jeonghee | - |
| dc.contributor.googleauthor | Han, Seunghee | - |
| dc.contributor.googleauthor | Lee, Yeonhee | - |
| dc.contributor.googleauthor | Kim, Ok Kyung | - |
| dc.contributor.googleauthor | Kim, Gon-Ho | - |
| dc.contributor.googleauthor | Kim, Young-Woo | - |
| dc.contributor.googleauthor | Lim, Hyuneui | - |
| dc.contributor.googleauthor | Jung, Hye Sun | - |
| dc.relation.code | 2012204500 | - |
| dc.sector.campus | E | - |
| dc.sector.daehak | COLLEGE OF SCIENCE & TECHNOLOGY[E] | - |
| dc.sector.department | DIVISION OF SCIENCE & TECHNOLOGY | - |
| dc.identifier.pid | ghkim | - |
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- COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E](과학기술융합대학) > ETC
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