Plasma Source Ion Implantation for Ultrashallow Junctions: Low Energy and High Dose Rate
- Title
- Plasma Source Ion Implantation for Ultrashallow Junctions: Low Energy and High Dose Rate
- Author
- 김곤호
- Keywords
- plasma source ion implantation; ultrashallow junction; junction depth; 0.15µm MOSFET; background doping concentration
- Issue Date
- 2001-04
- Publisher
- The Japan society of Applied Physics
- Citation
- Japanese Journal of Applied Physics, v. 40, no. 4R, page. 2506-2507
- Abstract
- Ultrashallow p+/n junctions fabricated by plasma source ion implantation (PSII) were studied. After as-implanted samples were spike-annealed at 1000°C and annealed for 5 s at 1000°C, for samples with a background doping concentration of 6×1017 #/cm3, ultrashallow junction depths of 548 Å and 745 Å, respectively, could be obtained with an implant energy of 0.5 keV. Also, sheet resistances of 330 Ω/\Box and 228 Ω/\Box were acquired, respectively. These junction depths and sheet resistances obtained by the PSII process were found to satisfy 0.15 µm metal oxide semiconductor field effect transistor (MOSFET) applications.
- URI
- https://iopscience.iop.org/article/10.1143/JJAP.40.2506/metahttps://repository.hanyang.ac.kr/handle/20.500.11754/158548
- ISSN
- 0021-4922; 1347-4065
- DOI
- 10.1143/JJAP.40.2506
- Appears in Collections:
- COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E](과학기술융합대학) > ETC
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