ICP-CVD 방법을 이용한 탄소 나노 튜브의 제작 및 물성 분석

Abstract

Carbon nanotubes (CNTs) were grown with high density on a large area of Ni-coated silicon oxide substrates by using an inductively coupled plasma-chemical vapor deposition (ICPCVD) of C2H2 at temperatures ranging from 600 to 700*0. The Ni catalyst was formed using an RF magnetron sputtering system with varying the operating pressure and exposure time of NH3 plasma. The surface morphology of nickel catalyst films and CNTs was examined by SEM and AFM. The graphitized structure of CNTs was confirmed by Ramman spectra. SEM, and TEM. The growth of CNTs was observed to be strongly influenced by the surface morphology of Ni catalyst, which depended on the pre-treatment time and growth temperature. Dense CNTs with uniform-sized grains were successfully grown by ICP-CVD.