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Characterization of ZnO/DLC/Si SAW devices using FCVA-produced DLC films

Title
Characterization of ZnO/DLC/Si SAW devices using FCVA-produced DLC films
Author
박진석
Keywords
DLC; FCVA deposition; sp3 fraction; piezoelectric ZnO; SAW device; frequency response
Issue Date
2002-05
Publisher
IEEE
Citation
Proceedings of the 2002 IEEE International Frequency Control Symposium and PDA Exhibition (Cat. No.02CH37234), page. 70-73
Abstract
Surface acoustic wave (SAW) filters were fabricated using a multilayer structure of ZnO/diamond-like carbon (DLC)/Si and frequency response characteristics were analyzed. DLC films were deposited with varying preparation conditions (substrate bias, deposition time, and N/sub 2/ doping flow rate). The sp/sup 3/ fraction, thickness, surface roughness, and resistivity of DLC films were measured as a function of deposition conditions. The center frequency of SAW devices with DLC-buffer was measured to be about 575 MHz, which was much higher than that (340 MHz) of ZnO/Si(100) SAW devices. The variation of center frequencies of DLC-buffer SAW devices showed almost the same trend as that of sp/sup 3/ fractions of DLC films. By decreasing the thickness of DLC buffer layers, higher electro-mechanical coupling coefficient (K/sub eff//sup 2/), lower insertion loss (IL), and larger side-lobe rejection (SLR) levels were obtained.
URI
https://ieeexplore.ieee.org/document/1075859?arnumber=1075859&SID=EBSCO:edseeehttps://repository.hanyang.ac.kr/handle/20.500.11754/157066
ISBN
0-7803-7082-1
DOI
10.1109/FREQ.2002.1075859
Appears in Collections:
COLLEGE OF ENGINEERING SCIENCES[E](공학대학) > ELECTRICAL ENGINEERING(전자공학부) > Articles
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