Threshold energy resist model for critical dimension prediction
- Title
- Threshold energy resist model for critical dimension prediction
- Author
- 안일신
- Keywords
- variable threshold resist model; resist model; energy threshold resist model; aerial image; linearity; proximity
- Issue Date
- 2003-06
- Publisher
- INST PURE APPLIED PHYSICS
- Citation
- Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, v.42, issue. 6B, page. 3905-3907
- Abstract
- The threshold energy resist model based on the aerial image is less time consuming and sometimes more efficient than the full
simulation model based on mathematical analysis of the whole complicated photolithography process. Moreover, this model
still contains a disadvantage that its prediction is limited in various situations. In this paper, we report the new threshold resist
model to predict the critical dimension (CD) on the wafer is presented. This model has a functional form that is consisted of
the aerial image intensity and its slope. The contours of a resist pattern are determined from the aerial image contours of the
process matched by using a functional form. High prediction accuracy in various patterns with respect to pattern sizes is
obtained by using the new model.
- URI
- https://iopscience.iop.org/article/10.1143/JJAP.42.3905https://repository.hanyang.ac.kr/handle/20.500.11754/155901
- ISSN
- 0021-4922
- DOI
- 10.1143/jjap.42.3905
- Appears in Collections:
- COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E](과학기술융합대학) > PHOTONICS AND NANOELECTRONICS(나노광전자학과) > Articles
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