Experimental and theoretical investigation on the relationship between AlN properties and AlN-based FBAR characteristics
- Title
- Experimental and theoretical investigation on the relationship between AlN properties and AlN-based FBAR characteristics
- Author
- 박진석
- Issue Date
- 2003-05
- Publisher
- IEEE
- Citation
- IEEE International Frequency Control Symposium and PDA Exhibition Jointly with the 17th European Frequency and Time Forum, 2003. Proceedings of the 2003
- Abstract
- Film bulk acoustic resonators (FBARs) with an
Al/AlN/Mo/Si (111) configuration are fabricated. In particular,
the effects of deposition conditions on material properties of AlN
films grown on Mo/Si substrate as well as the performance of
FBARs are studied. Piezoelectric AlN films are deposited using
RF magnetron sputtering at RF power = 250 W ~ 600 W, N2/Ar
ratio = 5/25 ~ 25/5, working pressure = 5 mTorr, substrate
temperature = 250 o
C. For all the deposited AlN films, the x-ray
diffraction (XRD) spectra and full width at half maximum
(FWHM) of rocking curves are measured in terms of the
deposition conditions, to characterize the c-axis preferred
orientation and crystal quality. The frequency response
characteristics (S11) of the fabricated FBARs are also measured.
The experimental results indicate that the characteristics of
FBARs can be determined by the material properties of the AlN
films. Furthermore, the theoretical relation ship between the
impedance parameters (Rm) of the BVD model and the AlN
properties has been established.
- URI
- https://ieeexplore.ieee.org/document/1275191?arnumber=1275191&SID=EBSCO:edseeehttps://repository.hanyang.ac.kr/handle/20.500.11754/155778
- ISBN
- 0-7803-7688-9
- ISSN
- 1075-6787
- DOI
- 10.1109/FREQ.2003.1275191
- Appears in Collections:
- COLLEGE OF ENGINEERING SCIENCES[E](공학대학) > ELECTRICAL ENGINEERING(전자공학부) > Articles
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