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dc.contributor.author강보수-
dc.date.accessioned2020-11-11T06:06:08Z-
dc.date.available2020-11-11T06:06:08Z-
dc.date.issued2003-03-
dc.identifier.citationAPPLIED PHYSICS LETTERS, v.82, Issue.13, page.2124-2126en_US
dc.identifier.issn0003-6951-
dc.identifier.urihttps://aip.scitation.org/doi/10.1063/1.1563833-
dc.identifier.urihttps://repository.hanyang.ac.kr/handle/20.500.11754/155394-
dc.description.abstractThe switching current profiles of ferroelectric Pt/Pb(Zr0.4Ti0.6)O3/Pt capacitors were investigated after high-temperature baking to elucidate the mechanisms for retention loss. In the same-state retention, a decrease in the peak value of switching current and increase in the switching time were observed. These changes in the switching characteristics were attributed to the growth of an internal field. By comparing with the switching characteristics of a virgin capacitor and using the Merz equations, we estimated quantitatively the magnitude of the internal field. In the opposite-state retention, backswitching of polarization, triggered by the internal field, was found to be the main cause of the retention loss.en_US
dc.language.isoen_USen_US
dc.publisherAMER INST PHYSICSen_US
dc.titleMechanisms for retention loss in ferroelectric Pt/Pb(Zr0.4Ti0.6)O3/Pt capacitorsen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.1563833-
dc.relation.journalAPPLIED PHYSICS LETTERS-
dc.contributor.googleauthorKang, B.S.-
dc.contributor.googleauthorYoon, J.-G.-
dc.contributor.googleauthorKim, D.J.-
dc.contributor.googleauthorNoh, T.W.-
dc.contributor.googleauthorSong, T.K.-
dc.contributor.googleauthorLee, Y.K.-
dc.contributor.googleauthorLee, J.K.-
dc.contributor.googleauthorPark, Y.S.-
dc.relation.code2007200866-
dc.sector.campusE-
dc.sector.daehakCOLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E]-
dc.sector.departmentDEPARTMENT OF APPLIED PHYSICS-
dc.identifier.pidbosookang-
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