Resist Pattern Collapse Modeling for Smaller Features

Abstract

The pattern size is reduced as the device becomes more integrated. The resist deformation phenomenon has been a serious problem under 100 nm line width pattern. In this study, a simulation tool for pattern collapse is created by using the existing beam sway model, and the effects of resist profile that affect pattern collapse have been studied. The distortion rate and collapse condition of patterns that are identical to the experimental data have been confirmed by simulation results with respect to surface tension of rinse liquid, contact angle of the rinse liquid at the resist surface, Young's modulus of the resist, pattern height, length of line and space, and aspect ratio.