Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 오혜근 | - |
dc.date.accessioned | 2020-10-26T05:12:37Z | - |
dc.date.available | 2020-10-26T05:12:37Z | - |
dc.date.issued | 2004-11 | - |
dc.identifier.citation | Journal of the Korean Physical Society, v.46, No.,2 Page.1439-1444 | en_US |
dc.identifier.issn | 0374-4884 | - |
dc.identifier.uri | https://www.kci.go.kr/kciportal/ci/sereArticleSearch/ciSereArtiView.kci?sereArticleSearchBean.artiId=ART000962980 | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/154851 | - |
dc.description.abstract | In the semiconductor lithography process, the thermal flow process after development can pattern sub-100-nm contact holes and saves the cost of using resolution enhancement technology. In this study, the resist flowing behavior and the contact hole shrinkage are described by using the level-set method and the thermal reflow length. The viscosity variable affects the shrinkage of the critical dimension. This variable is extracted from the experimental data by using a proposed equation. Our simulation results are in good agreement with the experimental results for various baking temperatures and times. Although the most effective process of a 193-nm chemically amplified resist is the post exposure bake process, the inhibition reaction order of the enhanced Mack model, which is a parameter of the development process, is shown to be the most controllable parameter for the critical dimension. In the resist reflow process, the side-wall angle of the resist profile is decreased by the surface tension. This phenomenon is shown to be similar to that in the spin coating process by modeling a dimensionless parameter in spin coating. | en_US |
dc.language.iso | en_US | en_US |
dc.publisher | 한국물리학회 | en_US |
dc.subject | Lithography | en_US |
dc.subject | Lithography simulation | en_US |
dc.subject | Chemically amplified resist | en_US |
dc.subject | Thermal resist flow | en_US |
dc.title | Bulk effects of the thermal flow resists | en_US |
dc.type | Article | en_US |
dc.contributor.googleauthor | kim, sang-kon | - |
dc.contributor.googleauthor | 오혜근 | - |
dc.contributor.googleauthor | Bok, Cheol-Kyu | - |
dc.contributor.googleauthor | 안일신 | - |
dc.contributor.googleauthor | Moon, Seung-Chan | - |
dc.contributor.googleauthor | Lee, Sung-Muk | - |
dc.sector.campus | E | - |
dc.sector.daehak | COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E] | - |
dc.sector.department | DEPARTMENT OF APPLIED PHYSICS | - |
dc.identifier.pid | hyekeun | - |
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