MIT characteristic of VO2 thin film deposited by ALD using vanadium oxytriisopropoxide precursor and H2O reactant
- Title
- MIT characteristic of VO2 thin film deposited by ALD using vanadium oxytriisopropoxide precursor and H2O reactant
- Author
- 전형탁
- Keywords
- Atomic layer deposition; Vanadium dioxide; Metal insulator transition; Sneak-path current; Selection device
- Issue Date
- 2019-10
- Publisher
- KOREAN ASSOC CRYSTAL GROWTH
- Citation
- JOURNAL OF CERAMIC PROCESSING RESEARCH, v. 20, no. 5, Page. 484-489
- Abstract
- VO2 is an attractive candidate as a transition metal oxide switching material as a selection device for reduction of sneak-path current. We demonstrate deposition of nanoscale VO2 thin films via thermal atomic layer deposition (ALD) with H2O reactant. Using this method, we demonstrate VO2 thin films with high-quality characteristics, including crystallinity, reproducibility using X-ray diffraction, and X-ray photoelectron spectroscopy measurement. We also present a method that can increase uniformity and thin film quality by splitting the pulse cycle into two using scanning electron microscope measurement. We demonstrate an ON / OFF ratio of about 40, which is caused by metal insulator transition (MIT) of VO2 thin film. ALD-deposited VO2 films with high film uniformity can be applied to next-generation nonvolatile memory devices with high density due to their metal-insulator transition characteristic with high current density, fast switching speed, and high ON / OFF ratio.
- URI
- http://www.kci.go.kr/kciportal/landing/article.kci?arti_id=ART002517226http://www.jcpr.or.kr/journal/archive/view/2342https://repository.hanyang.ac.kr/handle/20.500.11754/154108
- ISSN
- 1229-9162; 2672-152X
- DOI
- 10.36410/jcpr.2019.20.5.484
- Appears in Collections:
- COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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