Chemical mechanical polishing by colloidal silica-based slurry for micro-scratch reduction
- Title
- Chemical mechanical polishing by colloidal silica-based slurry for micro-scratch reduction
- Author
- 안유민
- Keywords
- Chemical mechanical polishing; Micro-scratch; Colloidal silica-based slurry; Micro electro mechanical systems
- Issue Date
- 2004-10
- Publisher
- ELSEVIER SCIENCE SA
- Citation
- Wear. v. 257, no. 7–8, Pages 785-789
- Abstract
- The chemical mechanical polishing (CMP) of aluminum and photoresist using colloidal silica-based slurry was investigated. The effects of varying slurry pH, silica concentration and oxidizer concentration on surface roughness and removal rate were investigated in order to determine the optimum conditions for those parameters. Using these optimum conditions silica-based CMP was compared with conventional CMP, which uses an alumina-based slurry. The results of the CMP of the aluminum with the colloidal silica-based slurry were good, but the CMP of the photoresist were not. The colloidal-based silica slurry produced a desirable fine Al surface with few micro-scratches, which is similar to what is produced by CMP using a filtered alumina-based slurry, but produced a photoresist surface with many micro-scratches. (C) 2004 Published by Elsevier B.V.
- URI
- https://www.sciencedirect.com/science/article/pii/S0043164804000730https://repository.hanyang.ac.kr/handle/20.500.11754/153872
- DOI
- 10.1016/j.wear.2004.03.020
- Appears in Collections:
- COLLEGE OF ENGINEERING SCIENCES[E](공학대학) > MECHANICAL ENGINEERING(기계공학과) > Articles
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