Hot-Carrier Degradation Estimation of a Silicon-on-Insulator Tunneling FET Using Ambipolar Characteristics
- Title
- Hot-Carrier Degradation Estimation of a Silicon-on-Insulator Tunneling FET Using Ambipolar Characteristics
- Author
- 최창환
- Keywords
- Tunneling FET; ambipolar current; hot-carrier stress; interface degradation; relaxation; degradation region
- Issue Date
- 2019-11
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Citation
- IEEE ELECTRON DEVICE LETTERS, v. 40, no. 11, Page. 1716-1719
- Abstract
- The unique degradation behavior of a tunneling field-effect transistor (TFET) under hot-carrier injection (HCI) stress has been previously investigated. However, while the source side (p(+)/p junction) of degradation (due to HCI stress) has been extensively studied, the drain side (p/n(+) junction) has not been investigated yet. Our study revealed that both bulk oxide and interfacial layer degradation occurred at the drain side, while an interfacial layer degradation was dominant at the source side at 300 K. This evidences a unique degradation mechanism of the tunneling FET.
- URI
- https://ieeexplore.ieee.org/document/8846059https://repository.hanyang.ac.kr/handle/20.500.11754/153855
- ISSN
- 0741-3106; 1558-0563
- DOI
- 10.1109/LED.2019.2942837
- Appears in Collections:
- COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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