Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 최창환 | - |
dc.date.accessioned | 2020-09-14T02:22:02Z | - |
dc.date.available | 2020-09-14T02:22:02Z | - |
dc.date.issued | 2019-11 | - |
dc.identifier.citation | IEEE ELECTRON DEVICE LETTERS, v. 40, no. 11, Page. 1716-1719 | en_US |
dc.identifier.issn | 0741-3106 | - |
dc.identifier.issn | 1558-0563 | - |
dc.identifier.uri | https://ieeexplore.ieee.org/document/8846059 | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/153855 | - |
dc.description.abstract | The unique degradation behavior of a tunneling field-effect transistor (TFET) under hot-carrier injection (HCI) stress has been previously investigated. However, while the source side (p(+)/p junction) of degradation (due to HCI stress) has been extensively studied, the drain side (p/n(+) junction) has not been investigated yet. Our study revealed that both bulk oxide and interfacial layer degradation occurred at the drain side, while an interfacial layer degradation was dominant at the source side at 300 K. This evidences a unique degradation mechanism of the tunneling FET. | en_US |
dc.description.sponsorship | This work was supported in part by the Nano Materials Technology Development Program under Grant 2016M3A7B4909942 and in part by the Creative Multilevel Research Center, Ministry of Science and ICT, National Research Foundation (NRF) of Korea, through the Creative Materials Discovery Program, under Grant 2015M3D1A1068062. | en_US |
dc.language.iso | en | en_US |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | en_US |
dc.subject | Tunneling FET | en_US |
dc.subject | ambipolar current | en_US |
dc.subject | hot-carrier stress | en_US |
dc.subject | interface degradation | en_US |
dc.subject | relaxation | en_US |
dc.subject | degradation region | en_US |
dc.title | Hot-Carrier Degradation Estimation of a Silicon-on-Insulator Tunneling FET Using Ambipolar Characteristics | en_US |
dc.type | Article | en_US |
dc.relation.no | 11 | - |
dc.relation.volume | 40 | - |
dc.identifier.doi | 10.1109/LED.2019.2942837 | - |
dc.relation.page | 1716-1719 | - |
dc.relation.journal | IEEE ELECTRON DEVICE LETTERS | - |
dc.contributor.googleauthor | Kang, Soo Cheol | - |
dc.contributor.googleauthor | Lim, Donghwan | - |
dc.contributor.googleauthor | Kang, Seok Jin | - |
dc.contributor.googleauthor | Lee, Sang Kyung | - |
dc.contributor.googleauthor | Choi, Changhwan | - |
dc.contributor.googleauthor | Lee, Dong Seon | - |
dc.contributor.googleauthor | Lee, Byoung Hun | - |
dc.relation.code | 2019003487 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DIVISION OF MATERIALS SCIENCE AND ENGINEERING | - |
dc.identifier.pid | cchoi | - |
dc.identifier.orcid | https://orcid.org/0000-0002-8386-3885 | - |
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