General Synthetic Route to High-Quality Colloidal III-V Semiconductor Quantum Dots Based on Pnictogen Chlorides
- Title
- General Synthetic Route to High-Quality Colloidal III-V Semiconductor Quantum Dots Based on Pnictogen Chlorides
- Author
- 오누리
- Keywords
- INSB NANOCRYSTALS; TRANSPORT; INP; CLUSTERS; DEVICES; SOLIDS; GROWTH; INDIUM
- Issue Date
- 2019-09
- Publisher
- AMER CHEMICAL SOC
- Citation
- JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, v. 141, no. 38, Page. 15145-15152
- Abstract
- The synthesis of colloidal III-V quantum dots (QDs), particularly of the arsenides and antimonides, has been limited by the lack of stable and available group V precursors. In this work, we exploit accessible InCl3- and pnictogen chloride-oleylamine as precursors to synthesize III-V QDs. Through coreduction reactions of the precursors, we achieve size- and stoichiometry-tunable binary InAs and InSb as well as ternary alloy InAs1-xSbx QDs. On the basis of structural, analytical, optical, and electrical characterization of the QDs and their thin-film assemblies, we study the effects of alloying on their particle formation and optoelectronic properties. We introduce a hydrazine-free hybrid ligand-exchange process to improve carrier transport in III-V QD thin films and realize InAs QD field-effect transistors with electron mobility ˃ 5 cm(2)/(V s). We demonstrate that III-V QD thin films are promising candidate materials for infrared devices and show InAs1-xSbx QD photoconductors with superior shortwavelength infrared (SWIR) photoresponse than those of the binary QD devices.
- URI
- https://pubs.acs.org/doi/10.1021/jacs.9b06652https://repository.hanyang.ac.kr/handle/20.500.11754/153844
- ISSN
- 0002-7863; 1520-5126
- DOI
- 10.1021/jacs.9b06652
- Appears in Collections:
- COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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