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dc.contributor.author강보수-
dc.date.accessioned2020-07-13T04:45:36Z-
dc.date.available2020-07-13T04:45:36Z-
dc.date.issued2004-09-
dc.identifier.citationApplied Physics Letters. v. 85, No. 13, Page. 2586-2588en_US
dc.identifier.issn0003-6951-
dc.identifier.urihttps://information.hanyang.ac.kr/#/eds/detail?an=edselc.2-52.0-7544247826&dbId=edselc-
dc.identifier.urihttps://repository.hanyang.ac.kr/handle/20.500.11754/151737-
dc.description.abstractEpitaxial (001)-oriented Bi3.25La0.75Ti3O12 (BLT) thin films were grown by pulsed-laser deposition on (001) LaAlO3 single-crystal substrates. The dielectric properties of the BLT films are highly anisotropic along different crystal directions. The dielectric constants are 358 and 160 along [100] and [1(1) over bar 0], respectively. Dielectric nonlinearity is also detected along these crystal directions. On the other hand, a much smaller dielectric constant and no detectable dielectric nonlinearity in a field range of 0-200 kV/cm are observed for a film along [001] where c-axis oriented SrRuO3 is used as the bottom electrode. (C) American Institute of Physics.en_US
dc.language.isoen_USen_US
dc.publisherAMER INST PHYSICSen_US
dc.subjectFERROELECTRIC PROPERTIESen_US
dc.subjectELECTRICAL-PROPERTIESen_US
dc.subjectBI4-XLAXTI3O12en_US
dc.subjectORIENTATIONen_US
dc.subjectDEPENDENCEen_US
dc.subjectELECTRODESen_US
dc.subjectDEPOSITIONen_US
dc.subjectBI4TI3O12en_US
dc.titleAnisotropic dielectric properties in epitaxial Bi3.25La0.75Ti3O12 thin films along different crystal directionsen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.1797536-
dc.relation.journalAPPLIED PHYSICS LETTERS-
dc.contributor.googleauthorLee, J.-S.-
dc.contributor.googleauthorLin, Y.-
dc.contributor.googleauthorLi, Y.-
dc.contributor.googleauthorJia, Q.X-
dc.contributor.googleauthorKang, B.S.-
dc.relation.code2007200866-
dc.sector.campusE-
dc.sector.daehakCOLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E]-
dc.sector.departmentDEPARTMENT OF APPLIED PHYSICS-
dc.identifier.pidbosookang-
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