ICP-CVD 방법을 이용하여 Ni 및 Invar 촉매 위에 성장시킨 탄소나노튜브의 구조적 물성 및 전계방출 특성

Abstract

Carbon nano t ub e s (CNTs) are grown on the TiN.coated silicon subst ra te by varying the thickness of Ni and I n v a r 426 catalyst layers at 6 0ᄋ0C using an inductively coupled p lasma-chemica l vapo r deposi t ion (ICP-CVD). The Ni and Inva r426 catalysts are fo rmed using an RF m a gn e t r on sput ter ing system with var ious deposit ion periods. Character ization using various t echn ique s , such as FESEM, HRTEM, and R am a n spec t roscopy, shows tha t the physical d imens ion as well as the crystal qua li ty of grown CNTs are s t rongly changed by the kind an d thickness of ca talyst ma te r ia ls . I t is also seen t h a t Ni ca talysts would be mo re desirable for ve r t ica l-a lignment of CNTs compa red with Inva r426 catalysts. However, the CNTs using Inva r426 catalysts display much bet ter electron emiss ion capabilities than those using Ni catalysts. The physical reason for all the mea s u re d da ta ob ta ined are discussed to establish the re lat ionship be tween structural proper ties and field-emissive proper ties of CNTs.