유연성 전자소자를 위한 고성능 N형의 유기무기 나노복합 반도체 제조에 대한 연구

Abstract

We report organic-inorganic nano-hybrid n-type semiconducting materials used for active channel layers of flexible thin film transistors (TFTs). It consists of inorganic solids and organic self-assembled layers as inorganic and organic layers respectively. The nanohybrid layers were developed by using molecular layer deposition (MLD) and atomic layer deposition (ALD) methods. We applied them to active channel layers of flexible TFTs. It shows outstanding electrical properties; greater than 7 cm^2/Vs of field-effect mobility, ca. 10^6 of Ion/Ioff ratios, less than 0.6 V of threshold voltage, and ca. 0.5 V/dec of swing slope. In addition, p-n junction diodes demonstrated in this study suggest that the organic/inorganic nanohybrid n-type semiconductors can be substitute for n-type organic semiconductors.