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유연성 전자소자를 위한 고성능 N형의 유기무기 나노복합 반도체 제조에 대한 연구

Title
유연성 전자소자를 위한 고성능 N형의 유기무기 나노복합 반도체 제조에 대한 연구
Other Titles
High Performance N-type Organic-Inorganic Nanohybrid Semiconductors for Flexible Electronic Devices
Author
박예록
Advisor(s)
성명모
Issue Date
2009-08
Publisher
한양대학교
Degree
Master
Abstract
We report organic-inorganic nano-hybrid n-type semiconducting materials used for active channel layers of flexible thin film transistors (TFTs). It consists of inorganic solids and organic self-assembled layers as inorganic and organic layers respectively. The nanohybrid layers were developed by using molecular layer deposition (MLD) and atomic layer deposition (ALD) methods. We applied them to active channel layers of flexible TFTs. It shows outstanding electrical properties; greater than 7 cm^2/Vs of field-effect mobility, ca. 10^6 of Ion/Ioff ratios, less than 0.6 V of threshold voltage, and ca. 0.5 V/dec of swing slope. In addition, p-n junction diodes demonstrated in this study suggest that the organic/inorganic nanohybrid n-type semiconductors can be substitute for n-type organic semiconductors.
URI
https://repository.hanyang.ac.kr/handle/20.500.11754/143668http://hanyang.dcollection.net/common/orgView/200000412622
Appears in Collections:
GRADUATE SCHOOL[S](대학원) > CHEMISTRY(화학과) > Theses (Master)
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