단일 벽 탄소나노튜브 네트워크의 합성

Abstract

Abstract Carbon nanotubes (CNTs) have attracted much attention due to their unique structure and excellent properties. However, there are many practical barriers which must be overcome to achieve CNT-based electronic devices. Besides ambiguity in separating metallic or semi-conducting nanotubes, placement of individual CNTs in the right positions on an array is crucial for nanotube integration in such devices. As an effort to realize CNT-based electronics, we focus on the growth and placement of CNTs in a compatible manner with current microelectronic processes for large-scale fabrication. I report the synthesis method of Single Walled Carbon Nanotube networks, which is crucial for their application to nanotechnology. SWCNT networks synthesis generally requires a microscale substrate. It is one of the important parameters affecting the quality of the produced Carbon Nanotubes including carbon precursor, synthesis temperature, atmosphere and reaction time. So we tried two different experimental substrates, porous silicon and texturing silicon having arbitrary three-dimensional topography. The CVD parameters such as process temperature, gas mixtures, pressure, flow rates were totally optimized, and the deposition of a thin-film catalyst was controlled. The direct synthesis of SWCNT networks on micro-structured substrates using Fe-Mo catalyst in combination with sputtering method was described in the thesis. One of the most important things was keeping the stable distribution without metal precipitate. This success may enable fundamental characterization of SWCNTs and industrial applications of various nanotube-based electronic devices.