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dc.contributor.author강보수-
dc.date.accessioned2020-03-20T05:52:22Z-
dc.date.available2020-03-20T05:52:22Z-
dc.date.issued2004-04-
dc.identifier.citationAPPLIED PHYSICS LETTERS, v. 84, No. 16, Page. 3127-3129en_US
dc.identifier.issn0003-6951-
dc.identifier.urihttps://aip.scitation.org/doi/10.1063/1.1710715-
dc.identifier.urihttps://repository.hanyang.ac.kr/handle/20.500.11754/139295-
dc.description.abstractThe retention characteristics of Ir/IrO2/Pb(Zro(0.4)Ti(0.6))O-3(PZT)/Pt/IrO2 capacitors were investigated by measuring the switching and nonswitching polarizations, the switching current profiles, and the P-V hysteresis loops. The retention losses of Ir/IrO2 /PZT/Pt/IrO2 capacitors were compared with those of the Pt/PZT/Pt capacitors, and a significant improvement of an opposite-state retention was observed. It was found that the growth and the relaxation behaviors of the internal field are quite similar for both capacitors, but that the polarization backswitching becomes significantly smaller for the PZT capacitors with the IrO2 top electrodes. The difference in polarization backswitching might originate from the nature of the ferroelectric/electrode interfaces, possibly suppressing the nucleation of opposite domains at the interfaces.en_US
dc.description.sponsorshipThis work was financially supported by the Ministry of Science and Technology through the Creative Research Initiative Programen_US
dc.language.isoen_USen_US
dc.publisherAMER INST PHYSICSen_US
dc.subjectPB(ZR,TI)O-3 THIN-FILMSen_US
dc.subjectCRYSTALLIZATIONen_US
dc.subjectTEMPERATUREen_US
dc.subjectFATIGUEen_US
dc.titlePolarization retention in Pb(Zr0.4Ti0.6)O3 capacitors with IrO2 top electrodesen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.1710715-
dc.relation.journalAPPLIED PHYSICS LETTERS-
dc.contributor.googleauthorKang, B. S.-
dc.contributor.googleauthorKim, D. J.-
dc.contributor.googleauthorJo, J. Y.-
dc.contributor.googleauthorNoh, T. W.-
dc.contributor.googleauthorYoon, Jong-Gul-
dc.contributor.googleauthorSong, T. K.-
dc.contributor.googleauthorLee, Y. K-
dc.contributor.googleauthorLee, J. K-
dc.contributor.googleauthorShin, S.-
dc.contributor.googleauthorPark, Y. S.-
dc.relation.code2007200866-
dc.sector.campusE-
dc.sector.daehakCOLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E]-
dc.sector.departmentDEPARTMENT OF APPLIED PHYSICS-
dc.identifier.pidbosookang-
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