Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 강보수 | - |
dc.date.accessioned | 2020-03-20T05:52:22Z | - |
dc.date.available | 2020-03-20T05:52:22Z | - |
dc.date.issued | 2004-04 | - |
dc.identifier.citation | APPLIED PHYSICS LETTERS, v. 84, No. 16, Page. 3127-3129 | en_US |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | https://aip.scitation.org/doi/10.1063/1.1710715 | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/139295 | - |
dc.description.abstract | The retention characteristics of Ir/IrO2/Pb(Zro(0.4)Ti(0.6))O-3(PZT)/Pt/IrO2 capacitors were investigated by measuring the switching and nonswitching polarizations, the switching current profiles, and the P-V hysteresis loops. The retention losses of Ir/IrO2 /PZT/Pt/IrO2 capacitors were compared with those of the Pt/PZT/Pt capacitors, and a significant improvement of an opposite-state retention was observed. It was found that the growth and the relaxation behaviors of the internal field are quite similar for both capacitors, but that the polarization backswitching becomes significantly smaller for the PZT capacitors with the IrO2 top electrodes. The difference in polarization backswitching might originate from the nature of the ferroelectric/electrode interfaces, possibly suppressing the nucleation of opposite domains at the interfaces. | en_US |
dc.description.sponsorship | This work was financially supported by the Ministry of Science and Technology through the Creative Research Initiative Program | en_US |
dc.language.iso | en_US | en_US |
dc.publisher | AMER INST PHYSICS | en_US |
dc.subject | PB(ZR,TI)O-3 THIN-FILMS | en_US |
dc.subject | CRYSTALLIZATION | en_US |
dc.subject | TEMPERATURE | en_US |
dc.subject | FATIGUE | en_US |
dc.title | Polarization retention in Pb(Zr0.4Ti0.6)O3 capacitors with IrO2 top electrodes | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1063/1.1710715 | - |
dc.relation.journal | APPLIED PHYSICS LETTERS | - |
dc.contributor.googleauthor | Kang, B. S. | - |
dc.contributor.googleauthor | Kim, D. J. | - |
dc.contributor.googleauthor | Jo, J. Y. | - |
dc.contributor.googleauthor | Noh, T. W. | - |
dc.contributor.googleauthor | Yoon, Jong-Gul | - |
dc.contributor.googleauthor | Song, T. K. | - |
dc.contributor.googleauthor | Lee, Y. K | - |
dc.contributor.googleauthor | Lee, J. K | - |
dc.contributor.googleauthor | Shin, S. | - |
dc.contributor.googleauthor | Park, Y. S. | - |
dc.relation.code | 2007200866 | - |
dc.sector.campus | E | - |
dc.sector.daehak | COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E] | - |
dc.sector.department | DEPARTMENT OF APPLIED PHYSICS | - |
dc.identifier.pid | bosookang | - |
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