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구리막 화학기계적 연마 공정에서 평탄도와 디싱을 개선하기 위한 콜로이달 실리카 입자 표면 제어

Title
구리막 화학기계적 연마 공정에서 평탄도와 디싱을 개선하기 위한 콜로이달 실리카 입자 표면 제어
Other Titles
Control of Colloidal Silica Surface for Improving Surface Roughness and Dishing in Copper Chemical Mechanical Planarization
Author
윤광섭
Advisor(s)
백운규
Issue Date
2012-08
Publisher
한양대학교
Degree
Master
Abstract
Control of colloidal silica surface for improving surface roughness and dishing in copper chemical mechanical planarization was investigated. We employed two methods that the surface property of colloidal silica changes. The one was synthesis of modified silica which had functional groups like brush on surface and the other was adsorption of polymer which was coiled by transforming the conformation on silica surface. Modified silica which had functional groups was confirmed by results of electrokinetic sonic amplitude (ESA) and COF values which indicated surface charge and hardness were changed. The adsorption of Polyethyleneimine (PEI) on colloidal silica and the changed surface character that adsorbed amount and conformation of polymer were changed were measured using total organic carbon (TOC) and atomic force microscopy (AFM). After Cu CMP was performed, the improvement of surface roughness and dishing was evaluated by AFM.
URI
https://repository.hanyang.ac.kr/handle/20.500.11754/136350http://hanyang.dcollection.net/common/orgView/200000420057
Appears in Collections:
GRADUATE SCHOOL[S](대학원) > NANOSCALE SEMICONDUCTOR ENGINEERING(나노반도체공학과) > Theses (Master)
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