다양한 구조의 광산발생기를 함유한 포토레지스트 합성 및 리소그래피 평가

Abstract

ArF lithgaphy system came into general lithography tool in semiconduct industry. Photoresist has an important role in the lithographic performance, and photoacid generator (PAG) is a key component in photoresist for high sensitivity. A new PAG monomer, triphenylsulfonium salt methylmethacylate (TPSMA) was designed for being bounding in the main polymer backbone and synthesized. All resists were analyzed by thermogravimetric analysis (TGA), differential scanning calorimeter (DSC). The characterization results were in good agreements with corresponding chemical compositions and thermal stability. We have applied lithography in order to demonstrate the effects of PAG structure. The response of resists included cyano PAG to 254 nm irradiation was found to be dual-tone performance, but positive tone pattern obtained low contrast. Cyano PAG bound polymers demanded higher exposure energy for fabrication pattern than PAG bound polymer. Cayno PAG was also showed low sensitivity in ArF lithography test. Llithography results of cyano PAG were explained that cyano group was caused a decline of sensitivity in photoresist. Hydrophilic PAG could control the acid diffusion in ArF lithography. Novel photoacid generators (PAGs) and corresponding PAG bound polymers were well qualified and successfully applied for fabrication of nano-scale patterns.