Reduced Graphene Oxide를 interlayer로 이용한 Molecular junction에서의 광 및 전기적 특성연구

Abstract

Alkanethiol self-assembled monolayers (SAMs) molecular junctions were studied using conductive atomic force microscopy (CAFM) to determine electronic properties. One of problem is that occur the structural deformation of SMAs caused by tip loading force effect. To prevent this structural deformation, we used reduced graphene oxide (rGO) as an interlayer. After confirmation of SAMs formation by analytical technique such as contact angle, ATR, and Raman, we progress this study. We confirm that current increase was decreased in molecular junction by using rGO as an interlayer. So, rGO makes molecular electronic device more stable. Thus, we can figure out intrinsic electronic property. (no deformation) Also, we examine the optical property and understanding their influence on electronic device using 253.7 nm UV light as an external stimulus. First, the current of electronic device with rGO was smaller than without rGO due to contact resistance of that. Second, the current increase of electronic device with rGO was much bigger than without rGO because rGO serves as an electron collector and transporter. Third, current increase was caused not by heat of lamp (temperature independent in tunneling effect), but particular energy of UV lamp. Our findings will make rGO and alkanethiol SAM hybrids promising in stable molecular junction, optoelectronics, and sensor applications.