A Study on Measurement Methods and Electrical Characteristics of TSV (Through-Silicon-Via)

Abstract

For past decades, the tendency of electronic system has been pushed to higher performance, smaller size, lower cost, lower power, and more versatility. To keep up with the tendencies, three-dimensional (3D) silicon integration is becoming increasingly significant. Through silicon via (TSV) plays the core role in providing vertical interconnections with greatly reduced interconnection length among the ICs integrated. Accordingly, the electrical measurements of TSV is becoming more important to analyze various aspects of the integrated chips. This paper first presents two methods: one is the fast TSV measurement method by shorting TSVs to a metal plate, the other one is rather conventional method of electrically touching both-side of TSV terminals. The TSVs with ubumps have been simulated using TCAD to see the correlations to measurements. The electrical measurement characteristics closely concurs with simulation.