Silicon oxide film deposited at room temperatures using high-working pressure plasma-enhanced chemical vapor deposition: Effect of O-2 flow rate
- Title
- Silicon oxide film deposited at room temperatures using high-working pressure plasma-enhanced chemical vapor deposition: Effect of O-2 flow rate
- Author
- 안지훈
- Keywords
- Silicon oxide; High working pressure plasma-enhanced chemical vapor deposition; Thin films; Water permeation property
- Issue Date
- 2017-09
- Publisher
- ELSEVIER SCI LTD
- Citation
- CERAMICS INTERNATIONAL, v. 43, no. 13, page. 10628-10631
- Abstract
- Silicon oxide films were deposited by high-worldng-pressure plasma-enhanced chemical vapor deposition using hexamethyldisiloxane and O-2/He plasma as the precursor and the reactant, respectively. As the O-2 flow rate increased during the process, the plasma density of O-2 and He decreased due to reduction in the partial pressure of He, which affected the composition of O/Si in the silicon oxide films. Consequently, we found out that the compositional ratio of SiO2/SiO could be modulated by O-2 flow conditions during the high-working-pressure plasma-enhanced chemical vapor deposition process. Additionally, it was observed that the water vapor transmission rate reduced with an increase in the O-2 flow rate because of a compositional change in the silicon oxide films.
- URI
- https://www.sciencedirect.com/science/article/pii/S0272884217308994?via%3Dihubhttps://repository.hanyang.ac.kr/handle/20.500.11754/121632
- ISSN
- 0272-8842; 1873-3956
- DOI
- 10.1016/j.ceramint.2017.05.095
- Appears in Collections:
- COLLEGE OF ENGINEERING SCIENCES[E](공학대학) > MATERIALS SCIENCE AND CHEMICAL ENGINEERING(재료화학공학과) > Articles
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