Achieving High Mobility in IGTO Thin-Film Transistors at a Low Temperature via Film Densification
- Title
- Achieving High Mobility in IGTO Thin-Film Transistors at a Low Temperature via Film Densification
- Author
- 정재경
- Keywords
- Densification; indium gallium tin oxide (IGTO); low temperature; mobility; sputtering; thin-film transistor (TFT)
- Issue Date
- 2018-11
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Citation
- IEEE TRANSACTIONS ON ELECTRON DEVICES, v. 65, no. 11, page. 4854-4860
- Abstract
- The effects of chamber pressure (P-C) on the structural and chemical properties of an indium gallium tin oxide (IGTO) channel layer were examined. Smoother and denser IGTO films were obtained with decreasing P-C, which were explained based on the enhanced kinetic energy of sputtered particles due to fewer collisions with the plasma atmosphere. The resulting IGTO thin-film transistor exhibited a high mobility of 35.0 cm(2)/Vs, subthreshold gate swing of 0.17 V/decade, threshold voltage (V-TH) of -0.45 V, and I-ON/OFF ratio >10(8), even at a low annealing temperature of 150 degrees C.
- URI
- https://ieeexplore.ieee.org/document/8467548https://repository.hanyang.ac.kr/handle/20.500.11754/120770
- ISSN
- 0018-9383; 1557-9646
- DOI
- 10.1109/TED.2018.2868697
- Appears in Collections:
- COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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