Influence of in-situ NH3 plasma passivation on the electrical characteristics of Ga-face n-GaN MOS capacitor with atomic layer deposited HfO2
- Title
- Influence of in-situ NH3 plasma passivation on the electrical characteristics of Ga-face n-GaN MOS capacitor with atomic layer deposited HfO2
- Author
- 최창환
- Keywords
- In- situ NH3 plasma passivation; Interface state density; GaN MOSCAP
- Issue Date
- 2018-11
- Publisher
- PERGAMON-ELSEVIER SCIENCE LTD
- Citation
- SOLID-STATE ELECTRONICS, v. 149, page. 52-56
- Abstract
- The effects of in-situ NH3 plasma passivation on the interface between atomic layer deposited HfO2 and Ga-face n-GaN substrate in metal-oxidesemiconductor (MOS) devices were investigated by varying plasma power and exposure time and compared with GaN MOS device without plasma passivation. ALD HfO2-GaN device with in-situ NH3 plasma treatment shows improved electrical characteristics including negligible frequency dispersion at the near flat-band voltage region, lower hysteresis (similar to 10 mV), suppressed oxide capacitance dispersion in the accumulation (2.2%), lower leakage current density (5.21 x 10(-2) A/cm(2) at 1 V), and low interface state density (D-it) of similar to 6.77 x 10(11) eV(-1) cm(-2) at E-c-E-t = 0.3 eV using an optimized plasma passivation exposure time of 10 min and power of 50 W. These results are attributed that NH3 plasma treatment could eliminate carbon species and detrimental sub-GaOx as well as passivate the surface and bulk defects on GaN caused by Ga-N dissociation.
- URI
- https://www.sciencedirect.com/science/article/pii/S0038110118301795?via%3Dihubhttps://repository.hanyang.ac.kr/handle/20.500.11754/120738
- ISSN
- 0038-1101; 1879-2405
- DOI
- 10.1016/j.sse.2018.08.009
- Appears in Collections:
- COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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