A Programmable Logic-in-memory (LiM) based on Magnetic Tunneling Junction (MTJ)

Abstract

A programmable logic-in-memory (LiM) based on magnetic tunneling junction (MTJ) is proposed. The logic function of the LiM is programmable by storing different state, that is, parallel or anti-parallel state, on a MTJ of reference cell. The logic function is performed by comparing the resistance of the MTJs in the cells representing the operands with that of the reference cell. A 24x8 LiM array has been simulated with a 65-nm CMOS process. When the LiM array is programmed as 8-bit full adder, the operation is completed in less than 3.6-ns and the energy consumption is 0.25-pJ/bit.