The Effect of Mechanical Stress on Cell Characteristics in MONOS Structures
- Title
- The Effect of Mechanical Stress on Cell Characteristics in MONOS Structures
- Author
- 송윤흡
- Keywords
- Curvature method; interface trap densities; mechanical stress; metal-oxide-nitride-oxide-semiconductor (MONOS) structure; residual stress
- Issue Date
- 2018-08
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Citation
- IEEE TRANSACTIONS ON ELECTRON DEVICES, v. 65, no. 10, page. 4313-4319
- Abstract
- We investigated the impact of mechanical stress on the cell characteristics of metal-oxide-nitride-oxide-semiconductor (MONOS) structures through experimental observations based on a curvature method for residual stress extraction and an analysis of the interface state. Residual stress induced on a substrate was observed to change from compressive to tensile depending on the tungsten process conditions; a high interface trap density was extracted under a high compressive stress environment based on a silicon bonding model. These interface trap densities were suggested as being attributable to a critical factor weakening the leakage characteristics of the MONOS structure. Besides, interface traps interrupted electron tunneling due to unintended charge trapping at the interface, which deteriorated memory characteristics indicated by a reduction in trap density. These results experimentally supported the effects of mechanical stress on device characteristics and reliability, which could be a straightforward way toward understanding the impact of stress for improved future flash memory applications.
- URI
- https://ieeexplore.ieee.org/document/8447253https://repository.hanyang.ac.kr/handle/20.500.11754/119650
- ISSN
- 0018-9383; 1557-9646
- Appears in Collections:
- COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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