Read-Write Circuit for STT-MRAM With Stochastic Switchings
- Title
- Read-Write Circuit for STT-MRAM With Stochastic Switchings
- Author
- 박상규
- Keywords
- Energy consumption; read circuit; reliability; spin-transfer torque magnetic random memory (STT-MRAM); stochastic behavior; write circuit
- Issue Date
- 2018-05
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Citation
- IEEE TRANSACTIONS ON MAGNETICS, v. 54, no. 5, Article no. 3400607
- Abstract
- Spin-transfer torque magnetic random memory (STT-MRAM) is a promising candidate for universal memory due to its non-volatility, fast access speed, high density, and low power consumption. In this paper, we propose a read-and-write circuit for STT-MRAMs, which decreases energy consumption and improves the endurance of STT-MRAM cells. The proposed circuit is capable of terminating write operations when the state of the cell has been switched to the desired one. In the circuit, the read and write operations share a single current driver. The proposed circuit including all the digital logic parts has been implemented using a CMOS process and validated using SPICE-level simulations.
- URI
- https://ieeexplore.ieee.org/document/8291058https://repository.hanyang.ac.kr/handle/20.500.11754/118774
- ISSN
- 0018-9464; 1941-0069
- DOI
- 10.1109/TMAG.2018.2795542
- Appears in Collections:
- COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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