Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 박상규 | - |
dc.date.accessioned | 2019-12-08T04:44:41Z | - |
dc.date.available | 2019-12-08T04:44:41Z | - |
dc.date.issued | 2018-05 | - |
dc.identifier.citation | IEEE TRANSACTIONS ON MAGNETICS, v. 54, no. 5, Article no. 3400607 | en_US |
dc.identifier.issn | 0018-9464 | - |
dc.identifier.issn | 1941-0069 | - |
dc.identifier.uri | https://ieeexplore.ieee.org/document/8291058 | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/118774 | - |
dc.description.abstract | Spin-transfer torque magnetic random memory (STT-MRAM) is a promising candidate for universal memory due to its non-volatility, fast access speed, high density, and low power consumption. In this paper, we propose a read-and-write circuit for STT-MRAMs, which decreases energy consumption and improves the endurance of STT-MRAM cells. The proposed circuit is capable of terminating write operations when the state of the cell has been switched to the desired one. In the circuit, the read and write operations share a single current driver. The proposed circuit including all the digital logic parts has been implemented using a CMOS process and validated using SPICE-level simulations. | en_US |
dc.description.sponsorship | This work was supported by the Future Semiconductor Device Technology Development Program under Grant 10044608 funded by the Ministry of Trade, Industry and Energy and Korea Semiconductor Research Consortium. The CAD tools were provided by IC Design Education Center, South Korea. | en_US |
dc.language.iso | en_US | en_US |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | en_US |
dc.subject | Energy consumption | en_US |
dc.subject | read circuit | en_US |
dc.subject | reliability | en_US |
dc.subject | spin-transfer torque magnetic random memory (STT-MRAM) | en_US |
dc.subject | stochastic behavior | en_US |
dc.subject | write circuit | en_US |
dc.title | Read-Write Circuit for STT-MRAM With Stochastic Switchings | en_US |
dc.type | Article | en_US |
dc.relation.no | 5 | - |
dc.relation.volume | 54 | - |
dc.identifier.doi | 10.1109/TMAG.2018.2795542 | - |
dc.relation.page | 607-607 | - |
dc.relation.journal | IEEE TRANSACTIONS ON MAGNETICS | - |
dc.contributor.googleauthor | Im, Il-Young | - |
dc.contributor.googleauthor | Park, Sang-Gyu | - |
dc.relation.code | 2018003453 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DEPARTMENT OF ELECTRONIC ENGINEERING | - |
dc.identifier.pid | sanggyu | - |
dc.identifier.orcid | https://orcid.org/0000-0002-6051-0163 | - |
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